“Going Ballistic”: review paper on graphene hot electron transistors published

A comprehensive review paper on the state of the art in graphene-based hot electron transistors has been published in the journal Solid State Communications. Part of a topical issue, this invited work summarizes the joint efforts of the GRADE consortium and the ERC project InteGraDe on this innovative electronic device concept, which we termed “Graphene Base Transistor”, or GBT. The paper summarizes experimental data and theoretical predictions of the GBTs potential for high frequency analog applications. The paper is dedicated to the memory of Prof. Wolfgang Mehr, the inventor of the GBT.

More information: max.lemme@uni-siegen.de, www.nano.uni-siegen.de