Two Papers about CVD graphene published
Recently, two papers have been published by our group regarding the technology of chemical vapor deposited graphene.
The first paper titled “Self-organized growth of graphene nanomesh with increased gas sensitivity” was published in the August edition of the journal “Nanoscale”. The paper discusses the self-organized growth of graphene nanomeshes and their applicability as gas sensors. It was published as the result of a collaboration between the University of Siegen and Infineon Technologies AG, Regensburg, Germany: A bottom-up chemical vapor deposition (CVD) process for the growth of graphene nanomesh films is demonstrated. The process relies on silicon nanospheres to block nucleation sites for graphene CVD on copper substrates. This new method for nano-patterned graphene is scalable, inexpensive and can be carried out in standard semiconductor industry equipment. Furthermore, the substrates are reusable. The paper can be found here.
The second paper is titled “Contact resistance study of various metal electrodes with CVD graphene” and appears in the November 2016 issue of Solid State Electronics. The work investigates the contact resistance of various metals to chemical vapor deposited monolayer graphene. Transfer length method (TLM) structures with varying widths and separation between contacts are electrically characterized in ambient air and vacuum condition. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices. The paper can be found here.