For two days, the University of Siegen was the national meeting place for experts from the field of innovative materials and technologies. Over 100 experts from academia, business and politics discussed the latest research findings.
Just an atom layer thin, yet also extremely robust and flexible – these are the properties of graphs and other “two-dimensional materials”. The high-tech substances could be used in a wide range of areas in the future: from sensors for smartphones, biomarkers in medical diagnostics and data communication with the highest transfer rates through to safety technology in cars. How the potential of 2D materials can be exploited was recently the subject of a two-day event at the University of Siegen.
In Nordrhein-Westfalen sind drei geförderte Forschungsprojekte zum Potential des neuen High-Tech-Materials Graphen erfolgreich beendet worden. Eines der Projekte hat die Universität Siegen in Zusammenarbeit mit der Firma PMD Technologies umgesetzt.
Das Material Graphen besteht aus reinem Kohlenstoff und verfügt über eine einzigartige Kombination von Eigenschaften: Es ist leitungsfähig, flexibel, extrem belastbar und hat deshalb das Potential zu großen technologischen Fortschritten. Mit dem Förderwettbewerb „Orientierungsprojekte für Anwendungsmöglichkeiten von Graphen und 2D-Materialien“ zielte die NRW-Landesregierung im Jahr 2015 darauf ab, dieses Potential zu prüfen. Auch die Universität Siegen und die universitäre Ausgründung PMD Technologies GmbH nahmen an dem Wettbewerb teil und setzten ein Projekt um.
Winfried Mönch, Fakultät für Physik, Universität Duisburg-Essen
The band-structure lineup at semiconductor interfaces is explained by the continua of intrinsic interface-induced gap states (IFIGS) that derive from the complex band structures of the semiconductors. The barrier heights of metal-semiconductor or Schottky contacts as well as the band-edge offsets of semiconductor heterostructures are composed of a zero-charge-transfer term plus an electrostatic-dipole contribution which are determined by the branch-point energies of the semiconductors and the electronegativity difference of the two materials in contact, respectively. It will be demonstrated that the IFIGS-and-electronegativity concept rather than the Schottky-Mott rule also explains the experimental barrier heights reported for graphene Schottky contacts.
An international group of researchers from universities, research institutes and industry met at the University of Siegen on March 17 and 18, 2016. The meeting was part of the regular VDE GMM meetings of the expert groups FG 1.3.1 "Integrated nanoelectronic and photonic systems" and FG 1.3.2 "Self-powered and power electronics systems". Current research topics of individual partners were presented and discussed in depth in keynote speeches. Here academic lectures were mixed with industrial lectures in the spirit of the expert group.
